| PART |
Description |
Maker |
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| CM530820 |
Dual SCR POW-R-BLOK Modules 200 Amperes/800 Volts
Dual SCR POW-R-BLOK⑩ Modules 200 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CSD3080H |
Single SCR POW-R-BLOK?/a> Modules 400 Amperes/800 Volts
Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts
Single SCR POW-R-BLOK⑩ Modules 400 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| CD430840A CD431240A CD431640A CD4340A |
POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 63 A, 800 V, SCR
POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 的POW - r -隔离台BLOk反应腔双可控硅模块四零安高达1600伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| PP900D060 |
POW-R-PAK 900A / 600V Half Bridge IGBT Assembly
POW-R-PAK 900A / 600V Half Bridge IGBT Assembly 的POW - r -巴基斯坦900A / 600V的IGBT的半桥大
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| 2N3823 MQ2N3821 |
N-CHANNEL J-FET DEPLETION MODE
N Channel JFET; Package: TO-72; VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF
|
Microsemi Corporation
Microsemi, Corp.
|
| PP150T060 |
POW-R-PAK 150A / 600V 3 phase IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| PP225D060 |
POW-R-PAK 200A / 1200V 3 phase IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
